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30 10V 25 4V 20 5V 4.5V 20 16 12 8 125C 4 Vgs=3V 0 25C 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds=5V Id (A) 15 3.5V 10 5 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics Id (A) Vgs (Volts) Figure 2: Transfer Characteristics 40 1.6 Normalized On-Resistance 35 Vgs=4.5V 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 Vgs=10V Id=7.2A Rds(on) (m:) 30 25 20 15 10 0 5 10 15 20 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=4.5V Id=4A 0 25 50 75 100 125 150 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 Id=7.2A 60 1.0E+00 1.0E-01 125C 40 30 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C Rds(on) (m:) Is Amps 50 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 125C 25C 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body diode characteristics 10 8 Vgs (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics Vds=15V Id=7.2A Capacitance (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss f=1MHz Vgs=0V 100 Rds(on) limited Id (Amps) 10 1ms 10ms 0.1s 1 1s 10s DC 0.1 0.1 1 Vds (Volts) 10 Tj(max.)=150C Ta=25C 100Ps 10Ps Power W 40 Tj(max.)=150C Ta=25C 30 20 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 -10V 25 20 -6V -5V -4V -4.5V 25 Vds=-5V 20 -Id (A) 15 10 -3.5V -Id (A) 15 10 Vgs=-3V 5 -2.5V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 0 0 1 2 3 4 5 6 -Vgs (Volts) Figure 2: Transfer Characteristics 1.60 125C 25C 5 90 Normalized On-Resistance 80 Rds(on) (m:) 70 60 50 40 30 20 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=-6.1A Vgs=-10V Vgs=-4.5V 1.40 Vgs=-10V Id=-6.1A Vgs=-4.5V Id=-4 1.20 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 70 125C -Is (A) 60 125C 50 40 30 20 10 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 -Vgs (Volts) Vds=-15V Id=-6.1A Capacitance (pF) 1500 1250 Ciss 1000 750 500 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics Coss Crss 6 4 2 0 100.0 Tj(max.)=150C, Ta=25C Rds(on) limited 0.1s 1.0 10Ps 100Ps 1ms 10ms 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 40 Tj(max.)=150C Ta=25C 30 Power (W) -Id (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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